V. A. Isaev, O. V. Grishenkova, M. V. Laptev, A. V. Isakov, Yu. P. Zaykov
ABSTRACT
The regularities of the formation of a continuous deposit layer under constant current are considered. The equations for calculation of time dependences of overpotential for instantaneous nucleation with kinetic- or diffusion-controlled growth of a new phase are analyzed. The theoretical dependences are compared with the experimental ones for the electrodeposition of silicon from a fluorideFchloride melt.
KEYWORDS: electrocrystallization, galvanostatic method, nucleation, growth, continuous layer, melt