N. I. Ilinykh, I. A. Malkova
ABSTRACT
In this paper, the equilibrium composition and thermodynamic characteristics of Ga–Sb, Al–Sb, and In–Sb binary melts were studied in a wide range of temperatures and compositions using the thermodynamic modeling method and the TERRA software. The investigation of temperature dependences of the partial pressures of the gas phase components formed above the melts of the AIIIBV system, where AIII–Ga, In, Al; BV–Sb was carried out. Concentration dependences of the activity content of the components, partial and integral melting characteristics of the melts have been constructed. It is shown that large negative deviations from the Raoult law are observed for all the melts studied. This fact is due to the presence of associates and indicates a strong interaction between the components of the melt. The temperature dependences of the logarithms of the partial pressures of the components of the gas phase are constructed. It is shown that for the components of the gas phase formed above the Ga–Sb, Al–Sb, and In–Sb melts, these dependences are linear.
KEYWORDS:: semiconductor materials, gallium, antimony, aluminum, indium, thermodynamic modeling, melt, gas phase, properties