A.V. Kaybichev, I.A. Kaybichev
KEYWORDS:
melt, silicon, admixtures, ion, multiatomicity
ABSTRACT:
The results for simultaneous melting of technical silicon samples in helium without and with applied electrical field were presented. The interlectrode transfer of Fi, Ti, Ca, Al, B was estimated. The ions fraction in the passed electricity was determined. The formation of multiatom ions in the electrical field was proved; the dependence on the atomic mass of the elements are revealed.