A.V. Kaybichev, I.A. Kaybichev
melt, silicon, admixtures, ion, multiatomicity
The results for simultaneous melting of technical silicon samples in helium without and with applied electrical field were presented. The interlectrode transfer of Fi, Ti, Ca, Al, B was estimated. The ions fraction in the passed electricity was determined. The formation of multiatom ions in the electrical field was proved; the dependence on the atomic mass of the elements are revealed.