Refining of technical silicon during melting in high purity helium with exposure to the melt of the electric field

A. V. Kaibyshev, I. A. Kaibyshev


Traced the removal of impurities from technical silicon by heating, melting and cooling. During the period of heating and cooling estimated removal of impurities in helium without the field, and when it melts with the influence of an electric field. The composition and sequence of removal of impurities from the melt determined. The effect of the polarity of the melt on the electrode transfer elements shown.


aluminum, calcium, boron, iron, titanium, melt, gram-atom, the current, electric field intensity